MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY

被引：102

作者：

FALICOV, LM

CUEVAS, M

机构：

来源：

PHYSICAL REVIEW | 1967年 / 164卷 / 03期

关键词：

D O I：

10.1103/PhysRev.164.1025

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1025 / &

共 13 条

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CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[5] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .I. EXPERIMENT
CUEVAS, M
[J]. PHYSICAL REVIEW, 1967, 164 (03): : 1021 - &
[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[7] GIBSON AF, 1964, PROGRESS SEMICOND ED, V8
[8] HERRING C, UNPUBLISHED RESULTS
[9] MCKELVEY JP, 1966, SOLIDSTATE SEMICONDU, P271
[10] MCKELVEY JP, 1966, SOLIDSTATE SEMICONDU, P315