NOVEL ELECTRO-OPTIC MODULATION EFFECT AT 10MU-M WAVELENGTH IN GAAS/ALGAAS QUANTUM WELLS

被引：9

作者：

KANE, MJ

EMENY, MT

APSLEY, N

WHITEHOUSE, CR

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 03期

关键词：

D O I：

10.1049/el:19890164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：230 / 231

页数：2

共 6 条

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HARRIS, JS .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :685-687

[2] INTER-SUB-BAND ABSORPTION IN GAAS/ALGAAS SINGLE QUANTUM WELLS [J].

KANE, MJ ;

EMENY, MT ;

APSLEY, N ;

WHITEHOUSE, CR ;

LEE, D .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (07) :722-725

[3] WAVE-GUIDE AND SURFACE-PLASMON COUPLED INFRARED DEVICES USING SEMICONDUCTOR QUANTUM WELLS [J].

KANE, MJ ;

APSLEY, N .

JOURNAL DE PHYSIQUE, 1987, 48 (C-5) :545-548

[4]

KANE MJ, IN PRESS SUPERLATTIC

[5] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

LEVINE, BF ;

CHOI, KK ;

BETHEA, CG ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1092-1094

[6] 1ST OBSERVATION OF AN EXTREMELY LARGE-DIPOLE INFRARED TRANSITION WITHIN THE CONDUCTION-BAND OF A GAAS QUANTUM WELL [J].

WEST, LC ;

EGLASH, SJ .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1156-1158

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