FORMATION OF RECTIFYING CONTACTS TO LANGMUIR-BLODGETT-FILMS OF POLY(3-HEXYLTHIOPHENE)

被引：8

作者：

PUNKKA, E

RUBNER, MF

机构：

[1] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge

来源：

SYNTHETIC METALS | 1991年 / 42卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0379-6779(91)91887-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rectifying contacts have been fabricated to structurally anisotropic Langmuir-Blodgett films of poly(3-hexylthiophene). The Schottky barriers were found to be of low resistance compared to the transverse resistance of the anisotropic films. The transport properties indicate bulk limited conduction and charge carrier tunnelling through thin rectifying barriers. The capacitive properties were analyzed within the framework of an appropriate equivalence circuit, and reasonable parameter values were obtained for the thin depletion layers and dopant concentrations.

引用

页码：1509 / 1513

页数：5

共 7 条

[1] LANGMUIR-BLODGETT MANIPULATION OF ELECTRICALLY CONDUCTIVE POLYPYRROLES [J].