SILICON DONOR-ACCEPTOR PAIRS AND SILICON-CARBON COMPLEXES IN GALLIUM-PHOSPHIDE

被引：9

作者：

MORRISON, SR ^{[1
]}

NEWMAN, RC ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 03期

关键词：

D O I：

10.1088/0022-3719/7/3/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：627 / 632

页数：6

共 12 条

[1]

DAWSON LR, 1972, PROG SOLID STATE CHE

[2] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&

[3] LOCALIZED MODE FREQUENCY FOR SUBSTITUTIONAL IMPURITIES IN ZINC BLENDE TYPE CRYSTALS [J].

GAUR, SP ;

VETELINO, JF ;

MITRA, SS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (12) :2737-&

[4] INFRARED-ABSORPTION BY POINT-DEFECTS IN GALLIUM-ARSENIDE [J].

GRIMM, A .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (14) :1883-&

[5] BORON AND CARBON IMPURITIES IN GALLIUM-ARSENIDE [J].

NEWMAN, RC ;

THOMPSON, F ;

HYLIANDS, M ;

PEART, RF .

SOLID STATE COMMUNICATIONS, 1972, 10 (06) :505-&

[6]

NEWMAN RC, 1973, INFRARED STUDIES CRY

[7]

NEWMAN RC, 1968, LOCALIZED EXCITATION

[8]

Pauling L., 1960, NATURE CHEM BOND INT

[9] LOCAL-MODE ABSORPTION AND DEFECTS IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

SPITZER, WG ;

ALLRED, W .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :4999-&

[10]

SPITZER WG, 1971, ADV SOLID ST PHYS, V1

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