A NEW INTERPRETATION OF END RESISTANCE MEASUREMENTS

[1] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[2] HOWER PL, 1973, IEEE T ELECTRON DEVI, V20

[3] LEE KH, UNPUB IEEE T ELECTRO

[4] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (05): : 111 - 113

[5] Shockley W., 1964, RES INVESTIGATION IN

[1] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[2] HOWER PL, 1973, IEEE T ELECTRON DEVI, V20

[3] LEE KH, UNPUB IEEE T ELECTRO

[4] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (05): : 111 - 113

[5] Shockley W., 1964, RES INVESTIGATION IN