ELECTRON-STATES IN A GAAS QUANTUM DOT IN A MAGNETIC-FIELD

被引:416
作者
KUMAR, A [1 ]
LAUX, SE [1 ]
STERN, F [1 ]
机构
[1] IBM CORP, DIV RES, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 08期
关键词
D O I
10.1103/PhysRevB.42.5166
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-consistent numerical solutions of the Poisson and Schrödinger equations have been obtained for electron states in a GaAs/AlxGa1-xAs heterostructure with confinement in all three spatial dimensions. The equations are solved in the Hartree approximation, omitting exchange and correlation effects. Potential profiles, energy levels, and the charge in the quantum dot are obtained as functions of the applied gate voltage and magnetic field. First, the zero-magnetic-field case is considered, and the quantum-dot charge is allowed to vary continuously as the gate voltage is swept. Then, in connection with the phenomenon of Coulomb blockade, the number of electrons in the quantum dot is constrained to integer values. Finally, the calculation is extended to examine the evolution of levels in a magnetic field applied perpendicular to the heterojunction. Our results indicate that the confining potential has nearly circular symmetry despite the square geometry of the gate, that the energy levels are quite insensitive to the charge in the quantum dot at a fixed gate voltage, and that the evolution of levels with increasing magnetic field is similar to that found for a parabolic potential. © 1990 The American Physical Society.
引用
收藏
页码:5166 / 5175
页数:10
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