THE MECHANISM OF GAAS ETCHING IN CRO3-HF SOLUTIONS .2. MODEL AND DISCUSSION

被引：28

作者：

KELLY, JJ ^{[1
]}

VANDEVEN, J ^{[1
]}

VANDENMEERAKKER, JEAM ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,MAT RES INST,DEPT SOLID STATE 3,6525 ED NIJMEGEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期

关键词：

D O I：

10.1149/1.2113716

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3026 / 3033

页数：8

共 18 条

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[5] UBER DEN MECHANISMUS DER ANODISCHEN AUFLOSUNG VON GALLIUMARSENID
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[6] GOMES WP, 1981, 32ND M ISE DUBR
[7] MECHANISMS OF CHROMIUM ELECTRODEPOSITION
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[8] THE INFLUENCE OF SURFACE RECOMBINATION AND TRAPPING ON THE CATHODIC PHOTOCURRENT AT P-TYPE III-V-ELECTRODES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 730 - 738
[9] HOLE INJECTION REACTIONS AND THE POTENTIAL DISTRIBUTION AT THE PARA-GAAS/ELECTROLYTE INTERFACE UNDER ANODIC POLARIZATION
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[J]. ELECTROCHIMICA ACTA, 1984, 29 (05) : 589 - 596
[10] SURFACE CHARGING EFFECTS DURING PHOTOANODIC DISSOLUTION OF N-GAAS ELECTRODES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2452 - 2459

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