SIMULATION OF THIN-FILM GRAIN STRUCTURES .2. ABNORMAL GRAIN-GROWTH

被引:109
作者
FROST, HJ [1 ]
THOMPSON, CV [1 ]
WALTON, DT [1 ]
机构
[1] MIT, DEPT MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
来源
ACTA METALLURGICA ET MATERIALIA | 1992年 / 40卷 / 04期
关键词
D O I
10.1016/0956-7151(92)90020-F
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A computer simulation of grain growth in two dimensions has been used to model microstructural evolution in thin films. In a companion paper we have simulated the stagnation of grain-growth due to grain-boundary grooving at the free surface of the film. In this paper we model the effect of driving force variations (due to variations of the free-surface energy among different crystals) on the origination and propagation of abnormal or secondary grain growth. The simulation produces an estimate for the magnitude of the driving force which is required to produce abnormal grain growth. The simulation also indicates that a key requirement for classic abnormal grain growth behavior is that a majority of the grains have free-surface energies which differ very little from each other.
引用
收藏
页码:779 / 793
页数:15
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