DEVELOPMENT OF CAVITONS AND TRAPPINGS OF RF FIELD

被引：220

作者：

KIM, HC ^{[1
]}

STENZEL, RL ^{[1
]}

WONG, AY ^{[1
]}

机构：

[1] UNIV CALIF,DEPT PHYS,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.33.886

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：886 / 889

页数：4

共 17 条

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