GA0.47IN0.53AS/INP SUPERLATTICE AVALANCHE PHOTODIODE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

BELTRAM, F ^{[1
]}

ALLAM, J ^{[1
]}

CAPASSO, F ^{[1
]}

KOREN, U ^{[1
]}

MILLER, B ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1170 / 1172

页数：3

共 8 条

[1] PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES [J].

CAPASSO, F ;

COX, HM ;

HUTCHINSON, AL ;

OLSSON, NA ;

HUMMEL, SG .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1193-1195

[2] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION, GRADING AND MULTIPLICATION REGIONS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

VELEBIR, JR ;

CAMPBELL, JC ;

QUA, GJ .

ELECTRONICS LETTERS, 1986, 22 (05) :235-236

[3] ANALYSIS OF THE DARK CURRENT AND PHOTORESPONSE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :951-968

[4] HIGH-SPEED INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODES WITH VERY LOW BACKGROUND DOPING GROWN BY CONTINUOUS TRICHLORIDE VAPOR-PHASE EPITAXY [J].

MATTERA, VD ;

CAPASSO, F ;

ALLAM, J ;

HUTCHINSON, AL ;

DICK, J ;

BROWN, JM ;

WESTPHAL, A .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2609-2612

[5] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MILLER, BI ;

SCHUBERT, EF ;

KOREN, U ;

OURMAZD, A ;

DAYEM, AH ;

CAPIK, RJ .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386

[6] NEW HIGH-SPEED LONG-WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS MULTIQUANTUM WELL AVALANCHE PHOTODIODES [J].

MOHAMMED, K ;

CAPASSO, F ;

ALLAM, J ;

CHO, AY ;

HUTCHINSON, AL .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :597-599

[7] IN GAAS/INP SUPERLATTICE AVALANCHE PHOTODETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

PANISH, MB ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :859-861

[8]

WEYL T, 1986, SURF SCI, V174, P505

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