CHARGE TRANSPORT AND TRAPPING MODEL FOR SCALED NITRIDE OXIDE STACKED FILMS

被引:6
作者
YOUNG, KK
HU, C
OLDHAM, WG
机构
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
关键词
D O I
10.1016/0169-4332(87)90090-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:171 / 179
页数:9
相关论文
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VARNELL GL, 1983, P IEEE MAY, P612
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Watanabe T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P173
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YAU LD, 1985, 2ND P INT S VLSI TEC, P295
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YOUNG KK, 1987, IN PRESS SILICON NIT