STATIC CHARACTERISTICS OF 1.5-1.6 MU-M GAINASP-INP BURIED HETEROSTRUCTURE BUTT-JOINTED BUILT-IN INTEGRATED LASERS

被引：9

作者：

TANBUNEK, T

SUZAKI, S

MIN, WS

SUEMATSU, Y

KOYAMA, F

ARAI, S

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 02期

关键词：

D O I：

10.1109/JQE.1984.1072354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：131 / 140

页数：10

共 25 条

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[8] 1.6 MU-M WAVELENGTH GAINASP-INP LASERS PREPARED BY 2-PHASE SOLUTION TECHNIQUE [J].

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[9]

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[10] CW OPERATION OF 1.5 - 1.6 MU-M WAVELENGTH GAINASP-INP BURIED-HETEROSTRUCTURE INTEGRATED TWIN-GUIDE LASER WITH DISTRIBUTED BRAGG REFLECTOR [J].

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