RAMAN RESPONSE OF GAAS/ALAS SUPERLATTICES WITH ALXGA1-XAS INTRALAYERS

被引：3

作者：

COLOMBO, L

MOLTENI, C

MIGLIO, L

机构：

[1] Dipartimento di Fisica, Università di Milano, I-20133 Milano

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 04期

关键词：

D O I：

10.1016/0749-6036(92)90313-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a theoretical investigation on the effects induced on the Raman spectra of a binary (001) GaAs/AlAs superlattice by an intentionally deposited ternary AlxGa1-xAs intralayer. We investigate how the intralayer chemical composition and position affect the GaAs-like response of the host system. © 1992.

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页码：523 / 525

页数：3

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