AN ACCURATE AND SIMPLE MOSFET MODEL FOR COMPUTER-AIDED-DESIGN

[1] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) : 481 - +

[2] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231

[3] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P21

[4] ELMANSY YA, 1980, IEEE J SOLID STATE C, V15

[5] GROVE AS, 1967, PHYS TECHNOL S, P321

[6] HUANG JST, 1975, IEEE T ELECTRON DEVI, V22

[7] MERCKEL G, 1972, IEEE T ELECTRON DEVI, V19

[8] POON HC, 1979, MAR VLSI MOD WORKSH

[9] SAH CT, 1964, IEEE T ELECTRON DEVI, V11

[10] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[1] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) : 481 - +

[2] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231

[3] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P21

[4] ELMANSY YA, 1980, IEEE J SOLID STATE C, V15

[5] GROVE AS, 1967, PHYS TECHNOL S, P321

[6] HUANG JST, 1975, IEEE T ELECTRON DEVI, V22

[7] MERCKEL G, 1972, IEEE T ELECTRON DEVI, V19

[8] POON HC, 1979, MAR VLSI MOD WORKSH

[9] SAH CT, 1964, IEEE T ELECTRON DEVI, V11

[10] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646