LOW COMPENSATION VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE

被引：12

作者：

COLTER, PC

LOOK, DC

REYNOLDS, DC

机构：

[1] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435

[2] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

关键词：

D O I：

10.1063/1.94327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：282 / 284

页数：3

共 12 条

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[2] ARMISTEAD CJ, UNPUB SOLID STATE CO
[3] FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45
[4] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 613 - 626
[5] LIQUID-PHASE EPITAXIAL-GROWTH OF ZN-DOPED AND S-DOPED GAAS
ISHII, M
TANAKA, T
SUSAKI, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 265 - 268
[6] LOOK DC, UNPUB PHYS REV B
[7] NAG B, 1980, ELECTRON TRANSPORT C
[8] OZEKI M, 1979, 1978 I PHYS C, V45, P220
[9] ELECTRON-MOBILITY IN VAPOR-GROWN GAAS FILMS
POTH, H
BRUCH, H
HEYEN, M
BALK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 285 - 288
[10] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS
RODE, DL
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04): : 1012 - +