INSTABILITY OF THE BEHAVIOR OF HIGH-RESISTIVITY SILICON DETECTORS DUE TO THE PRESENCE OF OXIDE CHARGES

被引：54

作者：

LONGONI, A

SAMPIETRO, M

STRUDER, L

机构：

[1] CNR,CTR ELETTR QUANTIST & STRUMENTAZ ELETTR,I-20133 MILAN,ITALY

[2] MAX PLANCK INST,W-8000 MUNICH,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期

关键词：

D O I：

10.1016/0168-9002(90)90460-N

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

[No abstract available]

引用

页码：35 / 43

页数：9

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DURAND E, 1966, ELECTROSTATIQUE, V2, P273

[3]

GROVE AS, 1967, PHYS TECHNOL S, pCH12

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[6] PROGRESS IN SEMICONDUCTOR DRIFT DETECTORS [J].

REHAK, P ;

WALTON, J ;

GATTI, E ;

LONGONI, A ;

SANPIETRO, M ;

KEMMER, J ;

DIETL, H ;

HOLL, P ;

KLANNER, R ;

LUTZ, G ;

WYLIE, A ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 248 (2-3) :367-378

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