SECONDARY DEFECTS IN 2 MEV PHOSPHORUS IMPLANTED SILICON

Annealing behavior of secondary defects in 2 Mev phosphorus ion implanted (100) silicon has been investigated through cross-sectional and plan-view TEM observation at doses of 2 multiplied by 10**1**3, 1 multiplied by 10**1**4 and 5 multiplied by 10**1**4 ions/cm**2. The critical dose for generating secondary defects is between 2 multiplied by 10**1**3 and 1 multiplied by 10**1**4 ions/cm**2. The maximum defect density is located at a mean depth of 2. 1 mu m from the surface, a location is deeper than that of the projected range of phosphorus ions and the primary defect peak. This defect position in the crystal is constant under all annealing conditions (e. g. , a temperature range of between 750 and 1100 degree C, annealing time of up to 6780 min at 1000 degree C), although the vertical distribution width of defects changes with both annealing temperature and time.