MORPHOLOGICAL INSTABILITIES IN THE LOW-PRESSURE SYNTHESIS OF DIAMOND

被引:45
作者
RAVI, KV
机构
[1] Lockheed Missiles and Space Company, Inc., Research and Development Division, Palo Alto, California 94304 1191
关键词
D O I
10.1557/JMR.1992.0384
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Morphological instabilities attending the high growth rate of diamond films are examined. Pertinent literature on morphological instabilities and microstructure evolution in vapor deposited films is reviewed and theoretical treatments related to the case of diamond growth are discussed. Diamond films of various thicknesses have been synthesized utilizing the combustion flame synthesis technique involving diamond growth rates of approximately 1-mu-m/min. Films of thicknesses under 20-mu-m are found to be dense and the surface smoothness of such films is governed by facets on the individual crystallites that make up the film. Increasing film thicknesses, at high growth rates. results in extremely rough surfaces, the trapping of voids and discontinuities, and the incorporation of non-diamond phases in the growing film. These characteristics are typical of morphological instabilities when surface diffusion and re-evaporation processes are absent and instability is promoted by the high rate arrival of the appropriate species from the flame ambient to the surface. Factors contributing to morphological instabilities include competitive shadowing and nutrient starvation and growth anisotropy of the different crystallographic faces on individual diamond crystals. It is shown that surface temperature and the presence of oxidizing species in the flame ambient contribute to anisotropic growth of diamond crystals and hence to morphological instabilities in diamond films. An approach to avoiding these instabilities is briefly discussed.
引用
收藏
页码:384 / 393
页数:10
相关论文
共 24 条
[1]   GROWTH AND EROSION OF THIN SOLID FILMS [J].
BALES, GS ;
BRUINSMA, R ;
EKLUND, EA ;
KARUNASIRI, RPU ;
RUDNICK, J ;
ZANGWILL, A .
SCIENCE, 1990, 249 (4966) :264-268
[2]   GROWTH DYNAMICS OF CHEMICAL VAPOR-DEPOSITION [J].
BALES, GS ;
REDFIELD, AC ;
ZANGWILL, A .
PHYSICAL REVIEW LETTERS, 1989, 62 (07) :776-779
[3]  
BERNHOLC J, 1988, JUL SDIO IST DIAM TE
[4]  
FAIRFIELD JM, 1967, J APPL PHYS, V38, P3184
[5]  
HIROSE Y, 1989, 1ST P INT S DIAM DIA, P80
[6]   EROSION OF DIAMOND FILMS AND GRAPHITE IN OXYGEN PLASMA [J].
JOSHI, A ;
NIMMAGADDA, R .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (07) :1484-1490
[7]   DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J].
KAMO, M ;
SATO, Y ;
MATSUMOTO, S ;
SETAKA, N .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :642-644
[8]   THIN-FILM GROWTH AND THE SHADOW INSTABILITY [J].
KARUNASIRI, RPU ;
BRUINSMA, R ;
RUDNICK, J .
PHYSICAL REVIEW LETTERS, 1989, 62 (07) :788-791
[9]   THE MORPHOLOGY CHANGES IN DIAMOND SYNTHESIZED BY HOT-FILAMENT CHEMICAL VAPOR-DEPOSITION [J].
KIM, JS ;
KIM, MH ;
PARK, SS ;
LEE, JY .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (07) :3354-3357
[10]   FLAME STRUCTURE AND DIAMOND GROWTH-MECHANISM OF ACETYLENE TORCH [J].
MATSUI, Y ;
YUUKI, A ;
SAHARA, M ;
HIROSE, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (09) :1718-1724