ANALYSIS OF DIELECTRIC-PROPERTIES OF I-VII, II-VI AND III-V CRYSTALS WITH ZNS STRUCTURE

An analysis of dielectric properties such as polarizabilities, effective charge parameters and dielectric constants is presented for I-VIII (CuCl, CuBr, CuI), II-VI (ZnSe, ZnTe, CdS, CdTe) and III-V (AlSb, GaP, GaAs, GaSb, InP, InAs, InSb) crystals with the zincblende structure. Calculations were performed with and without using full local field corrections. The analysis has been extended to evaluate the volume derivatives of the polarizabilities and effective charge parameters for GaAs, GaP, ZnS and CdS crystals. The transverse optic model Gruneisen parameters and anharmonic contributions to dielectric constants are also calculated for these crystals. The results are discussed and compared with available experimental data.