ANNEALING STAGE OF ELECTRON RADIATION DAMAGES IN IN-DOPED N-TYPE CDTE CRYSTALS

被引：1

作者：

MATSUURA, K ^{[1
]}

TSURUMI, I ^{[1
]}

机构：

[1] TOTTORI UNIV,FAC ENGN,DEPT ELECTR,KOYAMA,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 28卷 / 02期

关键词：

D O I：

10.1002/pssa.2210280258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K175 / K178

页数：4

共 16 条

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[8] CORRELATION BETWEEN IRRADIATION AND THERMALLY INDUCED DEFECTS IN II-VI COMPOUNDS [J].

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[9] THRESHOLD ENERGY OF ATOMIC DISPLACEMENT IN CDTE [J].

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