20 W CW MONOLITHIC ALGAAS (810 NM) LASER DIODE-ARRAYS

被引：6

作者：

SAKAMOTO, M

ENDRIZ, JG

SCIFRES, DR

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134-1356

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Good continuous-wave (CW) lifetimes have been demonstrated for 1 cm wide monolithic AlGaAs laser diode arrays (810 nm) with a 4800-mu-m total aperture width at a power level of 20 W. This represents the highest CW power level at which long lifetimes have been obtained.

引用

页码：178 / 180

页数：3

共 6 条

[1]

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SCIFRES, DR ;

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[3]

KEIRSTEAD MS, 1991, C LASERS ELECTROOPTI

[4] PERFORMANCE-CHARACTERISTICS OF HIGH-POWER CW, 1 CM WIDE MONOLITHIC ALGAAS LASER DIODE-ARRAYS WITH A 2 MM TOTAL APERTURE WIDTH [J].

SAKAMOTO, M ;

CARDINAL, MR ;

ENDRIZ, JG ;

WELCH, DF ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1990, 26 (07) :422-424

[5] 10-WATT CW, 5000 H LIFETIME MONOLITHIC ALGAAS LASER DIODE-ARRAYS [J].

SAKAMOTO, M ;

WELCH, DF ;

ENDRIZ, JG ;

ZUCKER, EP ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1989, 25 (15) :972-973

[6] 15-W CW MONOLITHIC ALGAAS LASER DIODE-ARRAYS [J].

SAKAMOTO, M ;

WELCH, DF ;

YAO, H ;

ENDRIZ, JG ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1991, 27 (11) :902-903

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