TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE

被引：1

作者：

GOSSMANN, HJ

RAFFERTY, CS

VREDENBERG, AM

LUFTMAN, HS

UNTERWALD, FC

EAGLESHAM, DJ

JACOBSON, DC

BOONE, T

POATE, JM

机构：

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.113006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1322 / 1323

页数：2

共 10 条

[1]

ANTONCIK E, 1994, APPL PHYS LETT, V64

[2] DISTRIBUTION OF POINT-DEFECTS IN SI(100)/SI GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY AND SOLID-PHASE EPITAXY [J].

ASOKAKUMAR, P ;

GOSSMANN, HJ ;

UNTERWALD, FC ;

FELDMAN, LC ;

LEUNG, TC ;

AU, HL ;

TALYANSKI, V ;

NIELSEN, B ;

LYNN, KG .

PHYSICAL REVIEW B, 1993, 48 (08) :5345-5353

[3] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].

FAHEY, PM ;

GRIFFIN, PB ;

PLUMMER, JD .

REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384

[4] TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS [J].

GOSSMANN, HJ ;

RAFFERTY, CS ;

VREDENBERG, AM ;

LUFTMAN, HS ;

UNTERWALD, FC ;

EAGLESHAM, DJ ;

JACOBSON, DC ;

BOONE, T ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1994, 64 (03) :312-314

[5] DIFFUSION OF DOPANTS IN B-DELTA-DOPED AND SB-DELTA-DOPED SI FILMS GROWN BY SOLID-PHASE EPITAXY [J].

GOSSMANN, HJ ;

VREDENBERG, AM ;

RAFFERTY, CS ;

LUFTMAN, HS ;

UNTERWALD, FC ;

JACOBSON, DC ;

BOONE, T ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3150-3155

[6] DOPING OF SI THIN-FILMS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

GOSSMANN, HJ ;

UNTERWALD, FC ;

LUFTMAN, HS .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8237-8241

[7]

GOSSMANN HJ, UNPUB

[8] POSITRON BEAM DEFECT PROFILING OF SILICON EPITAXIAL LAYERS [J].

SCHUT, H ;

VANVEEN, A ;

VANDEWALLE, GFA ;

VANGORKUM, AA .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3003-3006

[9]

TRUMBORE FA, 1960, BELL SYST TECH J, V39, P210

[10]

WEIR BE, IN PRESS APPL PHYS L

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