UNIFORM INTERMIXING OF QUANTUM-WELLS IN P-I-N MODULATOR STRUCTURES BY IMPURITY FREE VACANCY DIFFUSION

被引：6

作者：

LYCETT, SJ

DEWDNEY, AJ

GHISONI, M

NORMAN, CE

MURRAY, R

SANSOM, D

ROBERTS, JS

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MAT,LONDON SW7 2AX,ENGLAND

[2] UNIV SHEFFIELD,SERC,FACIL 35,SHEFFIELD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 03期

关键词：

PHOTOLUMINESCENCE; QUANTUM WELLS; SI-DOPED GAAS;

D O I：

10.1007/BF02659895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results of an investigation of impurity free vacancy diffusion (IFVD) post-growth treatments of p-i-n modulator structures. The investigation is in two parts. We first establish that gallium vacancies (V-Ga) are produced during IFVD (by measuring the intensity of the low temperature 1.2 eV signal from Si-V-Ga complexes) in a thick Si-doped GaAs sample. The second part of this work investigates the degree of intermixing of three 80 Angstrom GaAs quantum wells embedded in the intrinsic region of a p-i-n modulator at depths between 1-2 mu m from the surface. Photoluminescence studies on etched samples and cathodeluminescence showed that no significant depth dependence occurs as a result of IFVD.

引用

收藏

页码：197 / 202

页数：6

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