3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES

被引：9

作者：

LEE, JL

KIM, H

MUN, JK

KWON, O

LEE, JJ

PARK, HM

PARK, SC

机构：

[1] Semiconductor Division, Electronics and Telecommunications Research Institute, Taejon, Yusong

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 09期

关键词：

MESFETS; POWER TRANSISTORS;

D O I：

10.1049/el:19940477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3V have been developed. The MESFETs with 0.6mum gate length and 12mm gate width show a maximum drain current density of 310mA/mm and a uniform transconductance of around 112mS, ranging from V(gs) = -1.8V to 0.5V. The device tested at 3.3V drain bias and 900MHz demonstrates an output power of 30.9dBm with associate power-added-efficiency of 65% for an input power of 20dBm.

引用

页码：739 / 740

页数：2