INVERSE GROWTH-KINETICS ON INSB(110)

被引：4

作者：

CVETKO, D

DERENZI, V

FLOREANO, L

MORGANTE, A

PELOI, M

TOMMASINI, F

CHAB, V

PRINCE, KC

机构：

[1] SINCROTRONE TRIESTE,I-34012 TRIESTE,ITALY

[2] TASC,INFM LAB,I-34012 TRIESTE,ITALY

[3] UNIV LJUBLJANA,JOZEF STEFAN INST,LJUBLJANA,SLOVENIA

[4] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[5] UNIV TRIESTE,DIPARTMENTO FIS,I-34127 TRIESTE,ITALY

[6] ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE 6,CZECH REPUBLIC

来源：

SURFACE SCIENCE | 1995年 / 323卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)00781-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using He atom scattering, layer-by-layer erosion of InSb(110) by low energy ion bombardment has been observed to proceed via nucleation of vacancy islands, island growth and coalescence. The mechanism is in full agreement with theoretical models developed for crystal growth, with diffusing adatoms substituted by diffusing vacancies. In particular it has been observed that coalescence of the vacancy islands sets in after the removal of small fractions of a monolayer and that the average terrace width increases with number of sputtered monolayers.

引用

页码：L305 / L310

页数：6

共 20 条

[1] SURFACE RECONSTRUCTION IN LAYER-BY-LAYER SPUTTERING OF SI(111) [J].