KINK FORMATION IN CHARGED DISLOCATION

[1] ABLOVA MS, 1971, FIZ TVERD TELA+, V12, P2910

[2] ABLOVA MS, 1970, FIZ TVERD TELA+, V11, P2089

[3] ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28

[4] The Effect of Plastic Bending on the Electrical Properties of Indium Antimonide [J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (01) : 66 - 78

[5] BENOIT C, 1961, SELECTED CONSTANTS S

[6] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[7] YIELD POINT OF HIGHLY-DOPED GERMANIUM [J]. ACTA METALLURGICA, 1971, 19 (04): : 283 - &

[8] IMPURITY EFFECTS ON DISLOCATION VELOCITY IN GALLIUM-ARSENIDE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (04) : 1154 - &

[9] EROFEEV VN, 1971, SOV PHYS-SOLID STATE, V13, P116

[10] Erofeeva S. A., 1973, Soviet Physics - Solid State, V15, P538

[1] ABLOVA MS, 1971, FIZ TVERD TELA+, V12, P2910

[2] ABLOVA MS, 1970, FIZ TVERD TELA+, V11, P2089

[3] ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28

[4] The Effect of Plastic Bending on the Electrical Properties of Indium Antimonide [J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (01) : 66 - 78

[5] BENOIT C, 1961, SELECTED CONSTANTS S

[6] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[7] YIELD POINT OF HIGHLY-DOPED GERMANIUM [J]. ACTA METALLURGICA, 1971, 19 (04): : 283 - &

[8] IMPURITY EFFECTS ON DISLOCATION VELOCITY IN GALLIUM-ARSENIDE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (04) : 1154 - &

[9] EROFEEV VN, 1971, SOV PHYS-SOLID STATE, V13, P116

[10] Erofeeva S. A., 1973, Soviet Physics - Solid State, V15, P538