ON MECHANISM OF LITHIUM ION DRIFT IN ELECTRICAL FIELD OF A P-N JUNCTION IN SILICON

被引：7

作者：

ANTONOV, AS

机构：

来源：

PHYSICA STATUS SOLIDI | 1966年 / 16卷 / 02期

关键词：

D O I：

10.1002/pssb.19660160243

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：761 / &

共 8 条

[1]

ANTONOV AS, 1965, DOKL AKAD NAUK SSSR+, V164, P1260

[2]

ANTONOV AS, 1965, 2029 PREPR DUBN

[3]

ANTONOV AS, 1965, SOVIET PHYS J PHYS C, V39, P2252

[4]

BAILEY NA, 1962, IRE T, P91

[5]

BERMAN LS, 1963, NONLINEAR SEMICONDUC

[6]

Lehrer F.A., 1962, J APPL PHYS, V33, P2353, DOI [10.1063/1.1728960, DOI 10.1063/1.1728960]

[7] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION [J].

MORGAN, SP ;

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06) :1573-1602

[8] ION DRIFT IN AN N-P JUNCTION [J].

PELL, EM .