A P(VDF-TRFE)-BASED INTEGRATED ULTRASONIC TRANSDUCER

被引：23

作者：

FIORILLO, AS ^{[1
]}

VANDERSPIEGEL, J ^{[1
]}

BLOOMFIELD, PE ^{[1
]}

ESMAILZANDI, D ^{[1
]}

机构：

[1] UNIV PENN,CTR SENSOR TECHNOL,DEPT ELECT ENGN,PHILADELPHIA,PA 19104

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 22卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(89)80065-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin film of a copolymer of vinylidene fluoride and trifluoroethylene, P(VDF-TrFE) has been deposited on top of the extended gate of an MOS transistor to make an integrated ultrasonic transducer. After spin deposition from solution onto a processed silicon wafer, the 2.5 μm thick copolymer film was locally corona-polarized to make it piezo- and pyroelectrically active. The piezoelectric and pyroelectric properties of the film have been evaluated over a frequency range of 3 Hz to 1 MHz. The response was found to be comparable with those of casted copolymer films.The ultrasonic response of the film backed by the transistor was verified in water at 10 MHz. An optimization scheme for the copolymer thin film and its interfacing transistor is presented. © 1990.

引用

页码：719 / 725

页数：7

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