PHYSICAL MODELS FOR DEGRADATION EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS

被引:114
作者
HACK, M
LEWIS, AG
WU, IW
机构
[1] Xerox Palo Alto Research Center, Palo Alto
关键词
D O I
10.1109/16.210195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we present experimental data showing the degradation in performance of polysilicon Thin-Film Transistors (TFT's) under a variety of bias stress conditions. We propose a model to explain these degradation effects whereby device performance degrades due to changes in the effective density of defect states in the material. Unlike single-crystal devices which degrade from hot-carrier effects, we believe that poly-Si TFT's degrade primarily due to the presence of high carrier densities in the channel. We present good agreement between our computer simulations of the device characteristics and experimental data. Finally, we show that stressing under transient conditions leads to a more severe performance degradation than stressing under comparable steady-state conditions.
引用
收藏
页码:890 / 897
页数:8
相关论文
共 17 条
[1]   AVALANCHE-INDUCED EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].
HACK, M ;
LEWIS, AG .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) :203-205
[2]   NUMERICAL SIMULATIONS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
HACK, M ;
SHAW, J .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) :5337-5342
[3]   NUMERICAL SIMULATIONS OF AMORPHOUS AND POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].
HACK, M ;
SHAW, JG ;
LECOMBER, PG ;
WILLUMS, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2360-L2362
[4]  
HACK M, 1991, P MATER RES SOC S, V219, P315
[5]   ACTIVATION-ENERGY OF SOURCE-DRAIN CURRENT IN HYDROGENATED AND UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS [J].
KHAN, BA ;
PANDYA, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) :1727-1734
[6]  
Lewis A. G., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P264, DOI 10.1109/IEDM.1988.32807
[7]  
Lewis A. G., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P575, DOI 10.1109/IEDM.1991.235404
[8]  
LEWIS AG, 1990, IEDM, P843
[9]  
MATSEDA Y, 1990, SID 90 DIGEST, P315
[10]   BAND TAILS, ENTROPY, AND EQUILIBRIUM DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
SMITH, ZE ;
WAGNER, S .
PHYSICAL REVIEW LETTERS, 1987, 59 (06) :688-691