ELECTRON ACCUMULATION AT UNDOPED ALSB-INAS QUANTUM-WELLS - THEORY

被引：39

作者：

CHADI, DJ

机构：

[1] NEC Research Institute, Princeton, NJ 08540-6620

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13478

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The problem of the origin of electron accumulation at undoped AlSb-InAs quantum wells is examined. The magnitude and temperature dependence of the two-dimensional electron density in an InAs well on the binding energy and concentration of donorlike defects in AlSb is derived in closed form. The excellent agreement between the predicted and experimental temperature data makes it possible to extract the density, binding energy, and identity of the donorlike defects in AlSb. A microscopic explanation for the negative-persistent-photoconductivity effect exhibited by this quantum-well system is proposed.

引用

收藏

页码：13478 / 13484

页数：7

相关论文

共 16 条

[1] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190

[2] ANTISITE-INTERSTITIAL-COMPLEX MODEL FOR THE EL2 DEFECT IN GAAS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1992, 46 (23) :15053-15057

[3] EXPERIMENTAL-OBSERVATION OF LARGE ROOM-TEMPERATURE CURRENT GAINS IN A STARK-EFFECT TRANSISTOR [J].

COLLINS, DA ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1673-1675

[4] NONPARABOLICITY EFFECTS IN A QUANTUM WELL - SUBLEVEL SHIFT, PARALLEL MASS, AND LANDAU-LEVELS [J].

EKENBERG, U .

PHYSICAL REVIEW B, 1989, 40 (11) :7714-7726

[5] QUANTUM HALL-EFFECT IN INAS/ALSB QUANTUM-WELLS [J].

HOPKINS, PF ;

RIMBERG, AJ ;

WESTERVELT, RM ;

TUTTLE, G ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1428-1430

[6] ELECTRON ACCUMULATION IN ALGASB/INAS/ALGASB QUANTUM-WELL SYSTEM [J].

IDESHITA, S ;

FURUKAWA, A ;

MOCHIZUKI, Y ;

MIZUTA, M .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2549-2551

[7]

IDESHITA S, 1992, MATER RES SOC SYMP P, V262, P887, DOI 10.1557/PROC-262-887

[8]

IDESHITA S, UNPUB

[9] ARE THERE TAMM-STATE DONORS AT THE INAS-AISB QUANTUM-WELL INTERFACE [J].

KROEMER, H ;

NGUYEN, C ;

BRAR, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1769-1772

[10] SURFACE DONOR CONTRIBUTION TO ELECTRON SHEET CONCENTRATIONS IN NOT-INTENTIONALLY DOPED INAS-ALSB QUANTUM-WELLS [J].

NGUYEN, C ;

BRAR, B ;

KROEMER, H ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1992, 60 (15) :1854-1856