MODIFICATION OF THE ABSORPTION-EDGE DUE TO GRAIN-BOUNDARIES AND MECHANICAL STRESSES IN POLYCRYSTALLINE SEMICONDUCTOR-FILMS

被引：25

作者：

MAITY, AB

CHAUDHURI, S

PAL, AK

机构：

[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 183卷 / 01期

关键词：

D O I：

10.1002/pssb.2221830114

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Explicit expressions for the absorption coefficient beyond the absorption edge arc obtained by considering the Franz-Keldysh effect and mechanical stress to be operative simultaneously in the grain boundary regions of polycrystalline semiconductor films. The expressions are successfully utilized to explain the tail end of the absorption spectrum of ZnTe films.

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页码：185 / 191

页数：7

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