II-IV-V2 SEMICONDUCTORS - INVESTIGATIONS AND POTENTIAL APPLICATIONS

被引:5
作者
RUD, YV
机构
[1] A. F. Ioffe Physico-Technical Institute, St Petersburg, 194021
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词
II-IV-V2; DIODE STRUCTURES; PHOTOSENSITIVITY; LINEARLY POLARIZED RADIATION; PHOTOPLEOCHROISM; POLARIZATION INDICATRICES; PHOTOANALYSERS;
D O I
10.7567/JJAPS.32S3.512
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper is review of our previous work on the anisotropy of the photosensitivity of diode structures on the II-IV-V2 single crystals with the chalcopyrite structure. The photosensitivity spectra of the diodes were analyzed as a function of the polarization and the illumination geometry. It was established that the polarity of the photocurrent of the structures with two opposed barriers in II-IV-V2 single crystals changed with the polarization of the incident light and the photopleochroism coefficient exceeded. 100%. The investigated structures could be used both as wide-range and selective photodetectors and also as photoanalysers of linearly polarized radiation.
引用
收藏
页码:512 / 514
页数:3
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