DIELECTRIC LOSS IN THIN-FILMS OF AN AROMATIC POLYIMIDE

被引：11

作者：

ABOELFOTOH, MO

FEGER, C

CASTELLANO, A

KAUFMAN, R

MOLIS, S

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric response of thin aromatic polyimide films with thicknesses ranging from 40 nm to 3 mum has been measured in the frequency range of 10(4)-10(8) Hz. The dielectric loss shows a frequency-independent behavior regardless of film thickness, which is attributed to the dipolar response of the dielectric lattice. Film morphology is found to affect the magnitude of the dielectric loss but not its frequency dependence.

引用

页码：2286 / 2288

页数：3

共 26 条

[1] INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100) [J].