ELECTRON-IRRADIATION EFFECTS ON AMORPHOUS-SILICON SOLAR-CELLS

被引:4
作者
KATAYAMA, M
MORIMOTO, H
SUGAWARA, K
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 01期
关键词
D O I
10.1002/pssa.2210780143
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K5 / K8
页数:4
相关论文
共 7 条
[1]   EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J].
GOODMAN, NB .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04) :407-434
[2]  
Matsuda S., 1982, Japanese Journal of Applied Physics, Supplement, V21, P19
[3]  
SCHADE H, 1980, COUCHES MINCES S, V201, P999
[4]   OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].
STAEBLER, DL ;
WRONSKI, CR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268
[5]  
SUGAWARA K, 1982, 1ST I SPAC ASTR SCI, P138
[6]  
SUGAWARA K, 1982, 2ND P ISAS SPAC EN S, P139
[7]  
YOSHIDA S, 1982, 1ST P ISAS SPAC EN S, P144