STRUCTURAL AND OPTICAL CHARACTERIZATION OF ELECTRODEPOSITED CHALCOPYRITE CUINSXSE2-X THIN-FILMS

被引：11

作者：

GARG, P

GARG, A

GARG, JC

机构：

[1] Physics Department, University of Rajasthan, Jaipur

来源：

THIN SOLID FILMS | 1991年 / 206卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(91)90428-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and optical properties of thin films of copper indium sulphoselenide (CuInS(x)Se2-x) prepared by the electrodeposition technique are described. X-ray diffraction and energy-dispersive X-ray analysis showed that the films have a non-stoichiometric chalcopyrite structure with axial ratio c/a almost-equal-to 1.96. The films deposited at a current density of about 1.0 mA cm-2 are found to be indium rich. The polycrystalline films have an absorption coefficient alpha almost-equal-to 10(4) cm-1 and their optical band gap varies between 1.20 and 1.47 eV and depends on deposition current density and electrolyte bath composition.

引用

页码：236 / 240

页数：5

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