CRYSTALLOGRAPHIC ORIENTATION CONTROL OF SILICON STRIPES IN SIO2 GROOVES USING A NEW DOUBLE LASER ANNEALING TECHNIQUE

被引:8
作者
EGAMI, K [1 ]
KIMURA, M [1 ]
HAMAGUCHI, T [1 ]
机构
[1] NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI 213,JAPAN
关键词
D O I
10.1063/1.94611
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:962 / 964
页数:3
相关论文
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