ALUMINUM METALLIZATION TECHNOLOGY FOR SEMICONDUCTOR-DEVICES

被引：5

作者：

GAROSSHEN, TJ

STEPHENSON, TA

SLAVIN, TP

机构：

来源：

JOURNAL OF METALS | 1985年 / 37卷 / 05期

关键词：

D O I：

10.1007/BF03257742

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：55 / 59

页数：5

共 29 条

[1]

CHOTE PB, 1982 P REL PHYS C, P293

[2]

COLLIVER DJ, 1976, COMPOUND SEMICONDUCT

[3]

COLOLASER RA, 1980, MICROELECTRONICS PRO

[4] EFFECTS OF MG ADDITIONS ON ELECTROMIGRATION BEHAVIOR OF AL THIN-FILM CONDUCTORS [J].

DHEURLE, FM ;

GANGULEE, A ;

ALIOTTA, CF ;

RANIERI, VA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) :497-515

[5]

Elliott D.J., 1982, INTEGRATED CIRCUIT F

[6] HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING [J].

FAITH, TJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4630-4639

[7]

FRASER DB, 1983, METALLIZATION VLSI T, P359

[8]

FUNKENBUSCH AF, 1984, UTRC8440 TECHN REP

[9] ANOMALOUS LARGE GRAINS IN ALLOYED ALUMINUM THIN-FILMS .2. ELECTROMIGRATION AND DIFFUSION IN THIN-FILMS WITH VERY LARGE GRAINS [J].

GANGULEE, A ;

DHEURLE, FM .

THIN SOLID FILMS, 1973, 16 (02) :227-236

[10] LIFETIME AND DRIFT VELOCITY ANALYSIS FOR ELECTROMIGRATION IN SPUTTERED AL FILMS, MULTILAYERS, AND ALLOYS [J].

GRABE, B ;

SCHREIBER, HU .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :1023-&

← 1 2 3 →