ALUMINUM METALLIZATION TECHNOLOGY FOR SEMICONDUCTOR-DEVICES

被引:5
作者
GAROSSHEN, TJ
STEPHENSON, TA
SLAVIN, TP
机构
来源
JOURNAL OF METALS | 1985年 / 37卷 / 05期
关键词
D O I
10.1007/BF03257742
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:55 / 59
页数:5
相关论文
共 29 条
[11]  
HARRIS B, 1977, STRUCTURE PROPERTIES, P89
[12]  
HOFFMAN V, 1983, SOLID STATE TECH JUN, P119
[13]   INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES [J].
HOWARD, JK ;
WHITE, JF ;
HO, PS .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4083-4093
[14]   REACTIVE ION ETCHING INDUCED CORROSION OF AL AND AL-CU FILMS [J].
LEE, WY ;
ELDRIDGE, JM ;
SCHWARTZ, GC .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2994-2999
[15]  
MURAKAMI M, 1984, CRC CR REV SOL STATE, V11, P317
[16]  
NOWICKI RS, VLSI ELECTRONICS MIC, V8, P27
[17]   THE EFFECTS OF HYDROGEN AMBIENTS ON ELECTROMIGRATION KINETICS IN A1-2-PERCENT CU THIN-FILM CONDUCTORS [J].
PASCO, RW ;
FELTON, LE ;
SCHWARZ, JA .
SOLID-STATE ELECTRONICS, 1983, 26 (11) :1053-1063
[18]  
PRAMANIK D, 1983, SOLID STATE TECHNOL, V26, P127
[19]  
PRAMANIK D, 1983, SOLID STATE TECHNOL, V26, P131
[20]  
REISMAN A, 1982, P ELECTROCHEMICAL SO, V82, P22