COMPARISON OF DEEP CENTERS IN SEMIINSULATING LIQUID-ENCAPSULATED CZOCHRALSKI AND VERTICAL-GRADIENT FREEZE GAAS

Three-inch, semi-insulating (SI) GaAs, grown by the vertical gradient freeze (VGF) technique, has been studied by IR absorption, temperature-dependent dark current and Hall-effect, thermally stimulated current (TSC), and photoinduced current transient spectroscopy and has been compared with undoped, SI GaAs, both As-rich and Ga-rich, grown by the high-pressure liquid-encapsulated Czochralski method. The results clearly indicate that (1) the VGF GaAs contains less EL2, which suggests a less As-rich crystal stoichiometry; (2) in some VGF samples activation energies of 0.43 or 0.46 eV are deduced from temperature-dependent carrier concentration or resistivity measurements, respectively, and (3) VGF samples often show a thermal quenching behavior in the TSC peak T5. There is evidence to suggest that the 0.43 eV center is related to V(As), and T5 to V(Ga).