POSITRON MOBILITY IN THERMALLY GROWN SIO2 MEASURED BY DOPPLER BROADENING TECHNIQUE

被引：10

作者：

KONG, Y

LEUNG, TC

ASOKAKUMAR, P

NIELSEN, B

LYNN, KG

机构：

[1] Brookhaven National Laboratory, Upton

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.349353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The positron mobility in thermally grown SiO2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is approximately 13(10) X 10(-3) cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.

引用

页码：2874 / 2876

页数：3

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