ELECTRICAL CHARACTERISTICS OF PARAELECTRIC LEAD LANTHANUM ZIRCONIUM TITANATE THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS

被引：48

作者：

JONES, RE

MANIAR, PD

OLOWOLAFE, JO

CAMPBELL, AC

MOGAB, CJ

机构：

[1] Advanced Products Research and Development Laboratory, Motorola, Inc., Austin

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.106486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Paraelectric lead lanthanum zirconium titanate (PLZT) films, 150 nm thick, were deposited using a spin-coat, sol-gel process followed by a 650-degrees-C oxygen anneal. X-ray diffraction indicated complete conversion to the perovskite phase. Sputter-deposited platinum electrodes were employed with the PLZT films to form thin-film capacitors with the best combination of high charge storage density (26.1-mu-C/cm2 at 3 V and 36.4-mu-C/cm2 at 5 V) and leakage current density (0.2-mu-A/cm2 at 3 V and 0.5-mu-A/cm2 at 5 V) reported to date. The electrical characteristics of these thin-film capacitors meet the requirements for a planar bit cell capacitor for 64-Mbit dynamic random access memories.

引用

页码：1022 / 1024

页数：3

共 13 条

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