SOLID-PHASE EPITAXY OF RELAXED, IMPLANTATION-AMORPHIZED SI1-XGEX ALLOY LAYERS GROWN ON COMPOSITIONALLY GRADED BUFFERS

被引：21

作者：

SHIRYAEV, SY

FYHN, M

LARSEN, AN

机构：

[1] Institute of Physics and Astronomy, Aarhus University

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solid phase epitaxial regrowth of implantation-amorphized, relaxed Si0.75Ge0.25 alloy layers grown by molecular beam epitaxy on compositionally graded buffer layers was investigated with ion channeling techniques. The amorphization was done by Ge implantation. The regrowth velocity follows an Arrhenius curve in the investigated temperature range, 471 less-than-or-equal-to T less-than-or-equal-to 506-degrees-C, with an activation energy, E(a)=2.76+/-0.15 eV, equal to published values for Si. The regrowth velocity, however, is enhanced by almost a factor of 5 in this temperature range as compared to Si.

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页码：3476 / 3478

页数：3

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