PHASE-DIAGRAM OF THE HOLMIUM SILICON BINARY-SYSTEM AND PHYSICAL-PROPERTIES OF HOLMIUM SILICIDES UP TO 1050 DEGREES-C

被引：31

作者：

EREMENKO, VN ^{[1
]}

LISTOVNICHII, VE ^{[1
]}

LUZAN, SP ^{[1
]}

BUYANOV, YI ^{[1
]}

MARTSENYUK, PS ^{[1
]}

机构：

[1] IN FRANTSEVICH INST PROBLEM MAT SCI, KIEV 252180, UKRAINE

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1995年 / 219卷 / 1-2期

关键词：

PHASE DIAGRAMS; HOLMIUM SILICIDES; THERMAL EXPANSION; ELECTRORESISTIVITY; TEMPERATURE DEPENDENCE;

D O I：

10.1016/0925-8388(94)05035-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the phase equilibria in the Ho-Si system over the entire range of alloy compositions. The phase diagram has been established by means of differential thermal, X-ray and metallographic analyses. Seven intermetallic compounds have been found to exist in the system: Ho5Si3, Ho5Si4, HoSi1-x HoSi, Ho4Si5 and two Si-deficient compounds HoSi2-b and HoSi2-a. The paths of formation and the temperatures of phase transformations of all intermetallic compounds have been determined. The silicide Ho,Si, with the orthorhombic structure was discovered by us for the first time. The silicides HoSi2-a and HoSi2-b are dimorphous. The solid solubility of holmium in silicon and that of silicon in holmium are both negligible (less than 1 at.%). The electrical resistivity of both as-cast and heat-treated alloys was investigated at room temperature. Also, the temperature dependences of the electroresistivity and thermal expansion of holmium silicides were studied at temperatures up to 1050 degrees C.

引用

页码：181 / 184

页数：4

共 15 条

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