STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2)

被引:99
作者
KAWAHARA, T [1 ]
YAMAMUKA, M [1 ]
MAKITA, T [1 ]
NAKA, J [1 ]
YUUKI, A [1 ]
MIKAMI, N [1 ]
ONO, K [1 ]
机构
[1] MITSUBISHI ELECTR CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期
关键词
LSI; CVD; LIQUID SOURCE; CAPACITOR; BST; DIELECTRIC CONSTANT; LEAKAGE CURRENT DENSITY; FILM COMPOSITION; STEP COVERAGE;
D O I
10.1143/JJAP.33.5129
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of (Ba, Sr)TiO3 (BST) with high dielectric constant were prepared on Pt/SiO2/Si substrates of 6-inch-diameter by liquid source chemical vapor deposition using Ba(DPM)(2), Sr(DPM)(2) and TiO(DPM)(2) (DPM = dipivaloylmethanato; C11H19O2) dissolved in tetrahydrofuran (THF). The reproducibility of +/-3% for the film composition was achieved by optimizing the deposition procedures. It was found that the coverage of 72%, obtained at the substrate temperature T-s = 753 K, was better than those obtained using other Ti sources such as Ti(O-i-Pr)(4) (TTIP) and Ti(O-i-Pr)(2)(DPM)(2). The electrical properties of the 480-Angstrom-thick BST film, deposited at T-s = 753 K using TiO(DPM)(2), were as follows: dielectric constant epsilon = 230, equivalent SiO2 thickness t(eq) = 7.8 Angstrom, leakage current density J(L) = 6.7 X 10(-6) A/cm(2) at 1.65 V and dielectric loss tan delta = 0.013.
引用
收藏
页码:5129 / 5134
页数:6
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