PILE UP OF IMPLANTED PHOSPHORUS DURING PALLADIUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES

被引：15

作者：

KIKUCHI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

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D O I：

10.1063/1.332579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3998 / 4000

页数：3

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