GROWTH BY DIRECTIONAL FREEZING OF CUINSE2 AND DIFFUSED HOMOJUNCTIONS IN BULK MATERIAL

被引:12
作者
SHIH, I
CHAMPNESS, CH
SHAHIDI, AV
机构
[1] McGill Univ, Montreal, Que, Can, McGill Univ, Montreal, Que, Can
来源
SOLAR CELLS | 1986年 / 16卷 / 1-4期
基金
加拿大自然科学与工程研究理事会;
关键词
COPPER COMPOUNDS - CRYSTALS;
D O I
10.1016/0379-6787(86)90073-6
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
After a review of previous work on the growth of bulk crystalline CuInSe//2 by directional freezing, a description is given of the Bridgman and Stockbarger methods used to prepare homogeneous, p-type, void-free and crack-free ingots of the compound containing single crystal grains up to 15 mm multiplied by 2 mm. Homojunctions prepared from such material by in-diffusion of indium are described, along with characterization of the diodes using dark current-voltage characteristics, photovoltaic response and capacitance-bias measurements, from which concentration profiles are deduced.
引用
收藏
页码:27 / 41
页数:15
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