STIMULATED-EMISSION AT 2.8-MU-M FROM HG-BASED QUANTUM-WELL STRUCTURES GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：6

作者：

GILES, NC ^{[1
]}

YANG, Z ^{[1
]}

HAN, JW ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576946

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates by photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a continuous wave Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm and at temperatures >60 K. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1206 / 1209

页数：4

共 12 条

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