CRYSTALLIZATION STUDY OF CHEMICALLY VAPOUR-DEPOSITED AMORPHOUS-SILICON FILMS BY INSITU X-RAY-DIFFRACTION

被引：22

作者：

BISARO, R ^{[1
]}

PROUST, N ^{[1
]}

MAGARINO, J ^{[1
]}

ZELLAMA, K ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS,FRANCE

来源：

关键词：

D O I：

10.1016/0040-6090(85)90260-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：171 / 177

页数：7

共 14 条

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ZELLAMA, K
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6986 - 6994
[4] GUINIER A, 1964, THEORIE TECHNIQUE RA, P135
[5] RECENT ADVANCES IN AMORPHOUS-SILICON SOLAR-CELLS AND THEIR TECHNOLOGIES
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1265 - 1272
[6] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CVD SILICON FILMS NEAR THE CRYSTALLIZATION TEMPERATURE
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KAPLAN, D
BISARO, R
MORHANGE, JF
ZELLAMA, K
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 271 - 276
[7] Mead C., 1980, INTRO VLSI SYSTEMS
[8] MOROZUMI S, 1984, SID S DIGEST, V15, P316
[9] OKUMURA F, 1983, 15TH C SOL STAT DEV, P201
[10] PROUST N, 1983, 163RD M EL SOC SAN F