PARAMAGNETISM OF PHOSPHORUS DOPED SILICON IN NON-METALLIC IMPURITY CONDUCTION

被引：6

作者：

MAEKAWA, S

UE, H

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.22.1401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1401 / &

共 9 条

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KINOSHIT.N
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[3] MAEKAWA S, 1966, J PHYS SOC JPN, VS 21, P574
[4] MAEKAWA S, 1966, P INT C SEMICONDUCTO
[5] ELECTRON SPIN RESONANCE IN A SILICON SEMICONDUCTOR
PORTIS, AM
KIP, AF
KITTEL, C
BRATTAIN, WH
[J]. PHYSICAL REVIEW, 1953, 90 (05): : 988 - 989
[6] MAGNETIC ANOMALY IN METALLIC IMPURITY CONDUCTION
SASAKI, W
MAEKAWA, S
KINOSHITA, J
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) : 928 - +
[7] SEITZ F, 1962, SOLID STATE PHYSI ED, V13, P233
[8] MAGNETISM OF INTERACTING DONORS
SONDER, E
SCHWEINLER, HC
[J]. PHYSICAL REVIEW, 1960, 117 (05): : 1216 - 1221
[9] ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES
YAMANOUCHI, C
MIZUGUCHI, K
SASAKI, W
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) : 859 - +