NEW FLOATING-GATE ALGAAS/GAAS MEMORY DEVICES WITH GRADED-GAP ELECTRON INJECTOR AND LONG RETENTION TIMES

被引：27

作者：

CAPASSO, F

BELTRAM, F

MALIK, RJ

WALKER, JF

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期

关键词：

D O I：

10.1109/55.749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：377 / 379

页数：3

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